In Situ Interferometry of MOCVD-Grown ZnO for Nucleatlon-Layer-Based Optimization and Nanostructure Formation Monitoring

A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed...

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Bibliographic Details
Published inJournal of electronic materials Vol. 40; no. 4; p. 453
Main Authors Biethan, J-P, Considine, L, Pavlidis, D
Format Journal Article
LanguageEnglish
Published 01.04.2011
Subjects
Diffraction
Gallium nitrides
Interferometry
Monitoring
Morphology
Nanostructure
Nucleation
Zinc oxide
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Summary:A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0361-5235
DOI:10.1007/s11664-011-1515-2