DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47 As field effect transistors with variable gate-lengths
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Published in | IEEE electron device letters Vol. 22; no. 1; p. 5 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.01.2001
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/55.892426 |