DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47 As field effect transistors with variable gate-lengths

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Bibliographic Details
Published inIEEE electron device letters Vol. 22; no. 1; p. 5
Main Authors Dumka, D.C, Cueva, G, Hier, H, Aina, O.A, Adesida, I
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.01.2001
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.892426