Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric [Formula Omitted]

• Published in: IEEE electron device letters Vol. 33; no. 2; p. 185
• Main Authors: Muller, Johannes, Boscke, Tim S, Schroder, Uwe, Hoffmann, Raik, Mikolajick, Thomas, Frey, Lothar
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.02.2012
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2177435

We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin [Formula Omitted]. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (MFIS) with [Formula Omitted] gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to [Formula Omitted] suggest a retention of more than ten years.