Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-[Formula Omitted] Dielectric/Metal Gate

• Published in: IEEE electron device letters Vol. 32; no. 5; p. 686
• Main Authors: Kwon, Hyuk-Min, Han, In-Shik, Bok, Jung-Deuk, Park, Sang-Uk, Jung, Yi-Jung, Lee, Ga-Won, Chung, Yi-Sun, Lee, Jung-Hwan, Kang, Chang Yong, Kirsch, Paul, Jammy, Raj, Lee, Hi-Deok
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.05.2011
• Subjects: Noise
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2114633

The behavior of [Formula Omitted] random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of [Formula Omitted]/TaN is experimentally investigated and discussed. The [Formula Omitted]-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of [Formula Omitted]-RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma-SiON dielectric, which means that the noise distribution on a wafer level is independent of the gate oxide structure and/or material. However, the relative magnitude of change of the drain current to the applied current ([Formula Omitted]) of the p-MOSFETs with high-[Formula Omitted] (HK) dielectrics is greater than that of p-MOSFETs with conventional plasma-SiON dielectrics by about six times due to the greater number of preexisting bulk traps in the HK dielectric. Therefore, [Formula Omitted]-RTS noise and its associated [Formula Omitted] noise can present a serious issue to the CMOSFET with an advanced HK dielectric for low-power analog and mixed-signal applications.