Carrier distribution, gain, and lasing in 1.3-[mu]m InAs-InGaAs quantum-dot lasers
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Published in | IEEE journal of quantum electronics Vol. 40; no. 2; p. 105 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.02.2004
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Online Access | Get full text |
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ISSN: | 0018-9197 1558-1713 |
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DOI: | 10.1109/JQE.2003.821532 |