Annealing behavior of a proton irradiated AlxGa1-x N/GaN high electron mobility transistor grown by MBE

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 47; no. 2; p. 304
Main Authors Cai, S.J, Tang, Y.S, Li, R, Wei, Y.Y, Wong, L, Chen, Y.L, Wang, K.L, Chen, Mary, Schrimpf, R.D, Keay, J.C, Galloway, K.F
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.02.2000
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ISSN:0018-9383
1557-9646
DOI:10.1109/16.822272