Fast [Formula Omitted] Transients After the Program/Erase of Flash Memory Stacks With High-[Formula Omitted] Dielectrics

• Published in: IEEE transactions on electron devices Vol. 58; no. 3; p. 631
• Main Authors: Toledano-Luque, María, Degraeve, Robin, Zahid, Mohammed B, Kaczer, Ben, Blomme, Pieter, Kittl, Jorge A, Jurczak, M, Van Houdt, Jan, Groeseneken, Guido
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.03.2011
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2010.2100821

A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast -evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or erase conditions. The following different structures are investigated: 1) /high-[Formula Omitted] stacks; 2) charge trap memories; 3) and floating gate memories. Dielectrics targeted for Flash memory applications are used as charge trap layers and interpoly dielectrics. In this paper, we show results on , DyScO, GdScO, and hexagonal and perovskite LuAlO. The postprogram and post-erase curves hold useful information about the dielectric properties and are used as a fast screening technique for alternative materials.