Fast [Formula Omitted] Transients After the Program/Erase of Flash Memory Stacks With High-[Formula Omitted] Dielectrics
A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast -evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or...
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Published in | IEEE transactions on electron devices Vol. 58; no. 3; p. 631 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.03.2011
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Online Access | Get full text |
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Summary: | A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast -evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or erase conditions. The following different structures are investigated: 1) /high-[Formula Omitted] stacks; 2) charge trap memories; 3) and floating gate memories. Dielectrics targeted for Flash memory applications are used as charge trap layers and interpoly dielectrics. In this paper, we show results on , DyScO, GdScO, and hexagonal and perovskite LuAlO. The postprogram and post-erase curves hold useful information about the dielectric properties and are used as a fast screening technique for alternative materials. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2010.2100821 |