Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling microscopy (optical-STM) equipped with near-field continuous wave...

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Bibliographic Details
Published inarXiv.org
Main Authors Wu, Xuehao, Darlington, Thomas P, Holbrook, Madisen A, Yanev, Emanuil S, Holtzman, Luke N, Xu, Xiaodong, Hone, James C, Basov, D N, Schuck, P James, Pasupathy, Abhay N
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 01.11.2024
Subjects
Continuous radiation
Electromagnetic fields
Electron states
Electronic properties
Electronic structure
Excitation
Luminous intensity
Monolayers
Optical properties
Scanning tunneling microscopy
Transition metal compounds
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Summary:Intense electromagnetic fields can result in dramatic changes in the electronic properties of solids. These changes are commonly studied using optical probes of the modified electronic structure. Here we use optical-scanning tunneling microscopy (optical-STM) equipped with near-field continuous wave (CW) laser excitation to directly measure the electronic structure of light-dressed states in a monolayer transition metal dichalcogenide (TMD) semiconductor, WSe2. We find that the effective tunneling gap and tunneling density of states are strongly influenced by the intensity of the electromagnetic field when the applied field is resonant with the bandgap of the semiconductor. Our findings indicate that CW laser excitation can be used to generate light-dressed electronic states of quantum materials when confined strongly to the nanoscale.
ISSN:2331-8422