Nonvolatile Electrochemical Memory at 600C Enabled by Composition Phase Separation

CMOS-based microelectronics are limited to ~150{\deg}C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challengin...

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Bibliographic Details
Published inarXiv.org
Main Authors Li, Jingxian, Jalbert, Andrew J, Simakas, Leah S, Geisler, Noah J, Watkins, Virgil J, Cline, Laszlo A, Fuller, Elliot J, Talin, A Alec, Li, Yiyang
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 21.10.2024
Subjects
Composition
Data storage
Extreme values
High temperature
Information storage
Memory devices
Phase separation
Tantalum
Tantalum oxides
Wide bandgap semiconductors
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Summary:CMOS-based microelectronics are limited to ~150{\deg}C and therefore not suitable for the extreme high temperatures in aerospace, energy, and space applications. While wide bandgap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600 {\deg}C. Through correlative electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.
ISSN:2331-8422