Zero external magnetic field quantum standard of resistance at the 10-9 level

• Published in: arXiv.org
• Main Authors: Patel, D K, Fijalkowski, K M, Kruskopf, M, Liu, N, Götz, M, Pesel, E, Jaime, M, Klement, M, Schreyeck, S, Brunner, K, Gould, C, Molenkamp, L W, Scherer, H
• Format: Paper
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 17.10.2024
• Subjects: Accuracy; Condensed matter physics; Magnetic fields; Measurement; Quantum Hall effect; Topological insulators; Uncertainty
• ISSN: 2331-8422

The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.