Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures

We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced b...

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Bibliographic Details
Published inarXiv.org
Main Authors Wu, Shuhao, Li, Xinzhu, Gallagher, Ian, Lawrie, Benjamin, Wang, Hailin
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 23.09.2024
Subjects
Electron phonon interactions
Electron spin
Phonons
Silicon
Temperature dependence
Trapping
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ISSN2331-8422

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Summary:We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced by the spin bath of naturally abundant 13C atoms. The temperature dependence of the spin dephasing rates agrees with the theoretical expectation that phonon-induced spin dephasing arises primarily from orbital relaxation induced by first order electron-phonon interactions. A nearly 100-fold increase in spin lifetime is observed when the temperature is lowered from 4 K to slightly below 1 K, indicating that two-phonon spin-flip transitions play an essential role in the spin relaxation of SiV ground states.
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SourceType-Working Papers-1
ObjectType-Working Paper/Pre-Print-1
ISSN:2331-8422