Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication

Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an...

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Bibliographic Details
Published inarXiv.org
Main Authors Mukherjee, Subhrajit, Wang, Shuhua, Dasari Venkatakrishnarao, Tarn, Yaoju, Talha-Dean, Teymour, Lee, Rainer, Verzhbitskiy, Ivan A, Huang, Ding, Mishra, Abhishek, John Wellington John, Das, Sarthak, Bussoloti, Fabio, Maddumapatabandi, Thathsara D, Yee Wen Teh, Yee Sin Ang, Kuan Eng Johnson Goh, Lau, Chit Siong
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 13.09.2024
Subjects
Chemisorption
Electronics
Field effect transistors
Figure of merit
Low dimensional semiconductors
Molybdenum disulfide
Oxygen
Performance degradation
Phonons
Semiconductor devices
Silicon dioxide
Substrates
Transition metal compounds
Two dimensional materials
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Summary:Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theoretical phonon-limited intrinsic mobility. We achieve record carrier mobilities of 91 (132) cm2V-1s-1 for mono- (bi-) layer MoS2 transistors on SiO2 substrate. Statistics from over 60 devices confirm that oxygen-free fabrication enhances key figures of merit by more than an order of magnitude. While previous studies suggest that 2D transition metal dichalcogenides such as MoS2 and WS2 are stable in air, we show that short-term ambient exposure can degrade their device performance through irreversible oxygen chemisorption. This study emphasizes the criticality of avoiding oxygen exposure, offering guidance for device manufacturing for fundamental research and practical applications of 2D materials.
ISSN:2331-8422