Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities
On-chip emitters that generate single and entangled photons are essential for photonic quantum information processing technologies. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light, however at a rate limited by their spontaneous radiative life...
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Published in | arXiv.org |
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Main Authors | , , , , , , , , , , , , , , , , , , |
Format | Paper |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
13.08.2024
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Subjects | |
Online Access | Get full text |
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Summary: | On-chip emitters that generate single and entangled photons are essential for photonic quantum information processing technologies. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 ({\lambda}/n)3 and quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm with a multi-photon emission probability as low as 0.5 %. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates. |
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ISSN: | 2331-8422 |