Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

On-chip emitters that generate single and entangled photons are essential for photonic quantum information processing technologies. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light, however at a rate limited by their spontaneous radiative life...

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Published inarXiv.org
Main Authors Abhiroop Chellu, Bej, Subhajit, Wahl, Hanna, Kahle, Hermann, Uusitalo, Topi, Roosa Hytönen, Rekola, Heikki, Lang, Jouko, Schöll, Eva, Hanschke, Lukas, Kallert, Patricia, Kipp, Tobias, Strelow, Christian, Tuominen, Marjukka, Jöns, Klaus D, Karvinen, Petri, Niemi, Tapio, Guina, Mircea, Hakkarainen, Teemu
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 13.08.2024
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Summary:On-chip emitters that generate single and entangled photons are essential for photonic quantum information processing technologies. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 ({\lambda}/n)3 and quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm with a multi-photon emission probability as low as 0.5 %. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.
ISSN:2331-8422