Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the...

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Published inarXiv.org
Main Authors Gonzalez Betancourt, Ruben Dario, Zubáč, Jan, Geishendorf, Kevin, Ritzinger, Philipp, Růžičková, Barbora, Kotte, Tommy, Železný, Jakub, Olejník, Kamil, Springholz, Gunther, Büchner, Bernd, Thomas, Andy, Výborný, Karel, Jungwirth, Tomas, Reichlová, Helena, Kriegner, Dominik
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 25.04.2024
Subjects
Basal plane
Electron spin
Hall effect
Magnetoresistance
Magnetoresistivity
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Summary:Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.
ISSN:2331-8422