Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (...

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Bibliographic Details
Published inarXiv.org
Main Authors Kwan-Ho, Kim, Han, Zirun, Zhang, Yinuo, Musavigharavi, Pariasadat, Zheng, Jeffrey, Pradhan, Dhiren K, Stach, Eric A, Olsson, Roy H, Jariwala, Deep
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 19.03.2024
Subjects
Compatibility
Data processing
Diodes
Ferroelectric materials
Ferroelectricity
Interlayers
Memory devices
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Summary:The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM.
ISSN:2331-8422