Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materia...

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Published inarXiv.org
Main Authors Badura, Antonin, Campos, Warlley H, Bharadwaj, Venkata K, Kounta, Ismaïla, Michez, Lisa, Petit, Matthieu, Rial, Javier, Leiviskä, Miina, Baltz, Vincent, Krizek, Filip, Kriegner, Dominik, Zemen, Jan, Telkamp, Sjoerd, Sailler, Sebastian, Lammel, Michaela, Rodrigo Jaeschke Ubiergo, Anna Birk Hellenes, González-Hernández, Rafael, Sinova, Jairo, Jungwirth, Tomáš, Goennenwein, Sebastian T B, Šmejkal, Libor, Reichlova, Helena
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 19.03.2024
Subjects
Broken symmetry
Curvature
Density functional theory
Electron spin
Electronic structure
Magnetic materials
Mathematical analysis
Nernst-Ettingshausen effect
Thin films
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Summary:The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations.
ISSN:2331-8422