Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC

A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency (RF) induction enables heating capabilities up to...

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Bibliographic Details
Published inarXiv.org
Main Authors Mondal, S, Jayalekshmi, U J, Singh, S, Mukherjee, R K, Shukla, A K
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 04.03.2024
Subjects
Argon
Epitaxial growth
Grapes
Graphene
Heating
High vacuum
Low energy electron diffraction
Radio frequency
Raman spectroscopy
Silicon carbide
Sublimation
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Summary:A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency (RF) induction enables heating capabilities up to 2000{\deg}C, with controlled heating ramp rates achievable up to 200{\deg}C/s. Details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies such as close confinement sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.
ISSN:2331-8422