"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective ar...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Maoliang Wei, Xu, Kai, Tang, Bo, Li, Junying, Yun, Yiting, Zhang, Peng, Wu, Yingchun, Bao, Kangjian, Kunhao Lei, Chen, Zequn, Ma, Hui, Sun, Chunlei, Liu, Ruonan, Li, Ming, Li, Lan, Lin, Hongtao
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 30.08.2023
Subjects
Broadband
Electromagnetic wave filters
Functional materials
Integrated circuits
Mach-Zehnder interferometers
Modulation
Optical switching
Optoelectronics
Phase change materials
Phase error
Phase shifters
Photonics
Power consumption
Power management
Silicon nitride
Waveguides
Online AccessGet full text

Cover

More Information
Summary:Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits.
ISSN:2331-8422