Controlling the 2D magnetism of CrBr\(_3\) by van der Waals stacking engineering

The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly exami...

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Published inarXiv.org
Main Authors Yang, Shiqi, Xu, Xiaolong, Han, Bo, Gu, Pingfan, Guzman, Roger, Song, Yiwen, Lin, Zhongchong, Gao, Peng, Wu, Zhou, Yang, Jinbo, Chen, Zuxin, Yu, Ye
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 22.08.2023
Subjects
Antiferromagnetism
Controllability
Dichroism
Electrons
Ferromagnetism
First principles
Imaging techniques
Interlayers
Magnetic properties
Magnetism
Magnets
Stacking
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Summary:The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr\(_3\) via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr\(_3\) flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.
ISSN:2331-8422