Hybrid integrated near UV lasers using the deep-UV Al2O3 platform

Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide...

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Bibliographic Details
Published inarXiv.org
Main Authors Franken, C A A, W A P M Hendriks, Winkler, L V, Dijkstra, M, A R do Nascimento Jr, A van Rees, Mardani, M R S, Dekker, R, J van Kerkhof, P J M van der Slot, García-Blanco, S M, K -J Boller
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 22.02.2023
Subjects
Aluminum oxide
Feedback circuits
Fiber lasers
Gallium nitrides
Semiconductor lasers
Silicon nitride
Tunable lasers
Ultraviolet lasers
Waveguides
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Summary:Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
ISSN:2331-8422