3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N2-plasma nitridation for N-doped LaB6 metal and high-k LaBxNy insulator stacked structure

• Published in: Japanese Journal of Applied Physics Vol. 62; no. SC; p. SC1051
• Main Authors: Eun-Ki, Hong, Ohmi, Shun-ichiro
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese Journal of Applied Physics 01.04.2023
• Subjects: Electrodes; Field effect transistors; Gold; Leakage current; Nitrogen plasma; Pulse amplitude; Semiconductor devices
• ISSN: 0021-4922; 1347-4065
• DOI: 10.35848/1347-4065/acaed5

In this paper, we have investigated the low-voltage operation of pentacene-based floating-gate (FG) memory utilizing nitrogen-doped (N-doped) LaB6 metal and LaBxNy insulator stacked structure. The pentacene-based FG Au/pentacene/N-doped LaB6(Metal: M)/LaBxNy (Insulator: I)/N-doped LaB6(M)/LaBxNy(I)/n+-Si(100) (Semiconductor: S) MIMIS organic field-effect transistor (OFET) was fabricated by utilizing the Ar/N2-plasma nitridation to isolate the edge region of the N-doped LaB6 FG with Au source/drain (S/D) electrodes. The Ar/N2-plasma nitridation was found to be effective in suppressing the leakage current between the Au S/D electrodes and N-doped LaB6 FG. The pentacene-based FG memory was successfully developed with the memory window (MW) of 0.71 V and the saturation mobility (μsat) of 1.8 × 10−2 cm2/(V·s), under pulse input of ±3.4 V/10 ms due to the small equivalent oxide thickness (EOT) of 3.1 nm. Furthermore, MW of 0.4 V was obtained under minimum program/erase pulse amplitude/width of ±3 V/100 μs at the process temperature of 200 °C.