Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device

• Published in: arXiv.org
• Main Authors: Dutta, Debopriya, Mukherjee, Subhrajit, Uzhansky, Michael, Mohapatra, Pranab K, Ismach, Ariel, Koren, Elad
• Format: Paper
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 02.01.2023
• Subjects: Actuation; Engineers; Extreme values; Ferroelectric materials; Ferroelectricity; Heterostructures; Miniaturization; Molybdenum disulfide; Optoelectronic devices; Polarization; Two dimensional materials

Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile co...