Electrically Sign-Reversible Topological Hall Effect in a Top-Gated Topological Insulator (Bi,Sb)2Te3 on a Ferrimagnetic Insulator Europium Iron Garnet

Topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. However, the intriguing interplay between the topological surface state and THE is yet to be...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Wong, Jyun-Fong, Ko-Hsuan Mandy Chen, Jui-Min Chia, Huang, Zih-Ping, Sheng-Xin, Wang, Chen, Pei-Tze, Young, Lawrence Boyu, Yen-Hsun Glen Lin, Shang-Fan, Lee, Chung-Yu, Mou, Hong, Minghwei, Kwo, Jueinai
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 14.04.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. However, the intriguing interplay between the topological surface state and THE is yet to be fully understood. In this work, we report a large THE of ~10 ohm (~4 micro-ohm*cm) at 2 K with an electrically reversible sign in a top-gated 4 nm TI (Bi0.3Sb0.7)2Te3 (BST) grown on a ferrimagnetic insulator (FI) europium iron garnet (EuIG). Temperature, external magnetic field angle, and top gate bias dependences of magnetotransport properties were investigated and consistent with a skyrmion-driven THE. Most importantly, a sign change in THE was discovered as the Fermi level was tuned from the upper to the lower parts of the gapped Dirac cone and vice versa. This discovery is anticipated to impact technological applications in ultralow power skyrmion-based spintronics.
ISSN:2331-8422