Generic Cryo-CMOS Device Modeling and EDACompatible Platform for Reliable Cryogenic IC Design

This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to eva...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Tang, Zhidong, Wang, Zewei, Yuan, Yumeng, Chang, He, Luo, Xin, Guo, Ao, Chen, Renhe, Hu, Yongqi, Yang, Longfei, Cao, Chengwei, Liu, Linlin, Yu, Liujiang, Shang, Ganbing, Cao, Yongfeng, Chen, Shoumian, Zhao, Yuhang, Hu, Shaojian, Kou, Xufeng
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 09.02.2024
Subjects
CMOS
Computer design
Data processing
Frequency variation
Low temperature
MOSFETs
Quantum computers
Storage systems
Online AccessGet full text

Cover

More Information
Summary:This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM, 5-bit flash ADC and 8-bit current steering DAC are designed, and their performance is readily investigated and optimized on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design.
ISSN:2331-8422