Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers

Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to sp...

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Bibliographic Details
Published inarXiv.org
Main Authors Wang, W G, C Ni, Ozbay, A, Shah, L R, Fan, X, Kou, X M, Nowak, E R, Xiao, J Q
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 30.10.2022
Subjects
Current voltage characteristics
Hopping conduction
Magnetoresistance
Magnetoresistivity
Room temperature
Temperature dependence
Tunnel junctions
Zinc tellurides
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Summary:Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hopping conduction through the defect states inside the barrier.
ISSN:2331-8422