Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (Z...

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Bibliographic Details
Published inarXiv.org
Main Authors Mei, Hongyan, Koch, Alexander, Wan, Chenghao, Rensberg, Jura, Zhang, Zhen, Salman, Jad, Hafermann, Martin, Schaal, Maximilian, Xiao, Yuzhe, Wambold, Raymond, Ramanathan, Shriram, Ronning, Carsten, Kats, Mikhail A
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 02.06.2022
Subjects
Annealing
Carrier density
Doping
Ion beams
Metal oxides
Optical properties
Phase transitions
Vanadium dioxide
Zinc oxide
Zinc oxides
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Summary:We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.
ISSN:2331-8422