Activation of magnetic moments in CVD-grown graphene by annealing

Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from e...

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Bibliographic Details
Published inarXiv.org
Main Authors Shin, Hyungki, Sajadi, Ebrahim, Khademi, Ali, Lüscher, Silvia, Folk, Joshua A
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 08.10.2021
Subjects
Annealing
Chemical vapor deposition
Graphene
Magnetic moments
Magnetism
Magnetoresistance
Magnetoresistivity
Rare gases
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Summary:Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied.
ISSN:2331-8422