Evidence of hydrogen diffusion in n-type GaN

The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/high frequency electronics. Therefore, it is desirable to continue the research on its diffusion and segregation in semicon...

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Bibliographic Details
Published inarXiv.org
Main Authors Jakiela, Rafal, Barcz, Adam
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 03.08.2020
Subjects
Diffusion
Diffusion coefficient
Epitaxial growth
Gallium nitrides
Hydrogen
Ions
Optoelectronics
Secondary ion mass spectrometry
Semiconductor materials
Vapor phase epitaxy
Vapor phases
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Summary:The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/high frequency electronics. Therefore, it is desirable to continue the research on its diffusion and segregation in semiconductor materials. In this work, we report on a first observation on hydrogen outdiffusion from bulk crystalline gallium nitride. The extent of the hydrogen diffusion is established by secondary ion mass spectrometry. Analysis of characteristic hydrogen profile in GaN grown using ammonothermal method, led to the determination of the hydrogen diffusion coefficient at the temperature of 1045C - a standard growth temperature for HVPE (halide vapor phase epitaxy) method.
ISSN:2331-8422