Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi\(_2\)Se\(_4\)

The intrinsic magnetic topological insulators MnBi\(_2\)X\(_4\) (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi\(_2\)Te\(_4\), the study of MnBi\(_2\)Se\(_4\) has been lac...

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Published inarXiv.org
Main Authors Zhu, Tiancong, Bishop, Alexander J, Zhou, Tong, Zhu, Menglin, O'Hara, Dante J, Baker, Alexander A, Cheng, Shuyu, Walko, Robert C, Repicky, Jacob J, Gupta, Jay A, Jozwiak, Chris M, Rotenberg, Eli, Hwang, Jinwoo, Žutić, Igor, Kawakami, Roland K
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 17.03.2020
Subjects
Antiferromagnetism
Broken symmetry
Crystal structure
Electronic structure
Electrons
Magnetic measurement
Magnetic properties
Microscopy
Molecular beam epitaxy
Multilayers
Photoelectric emission
Scanning transmission electron microscopy
Tellurium
Thickness
Topological insulators
Topology
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Summary:The intrinsic magnetic topological insulators MnBi\(_2\)X\(_4\) (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi\(_2\)Te\(_4\), the study of MnBi\(_2\)Se\(_4\) has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi\(_2\)Se\(_4\) with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi\(_2\)Se\(_4\), which demonstrates that MnBi\(_2\)Se\(_4\) is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi\(_2\)Se\(_4\) is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
ISSN:2331-8422
DOI:10.48550/arxiv.2003.07938