Regional Bandgap Tailoring of 1550nm‐Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) aro...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 217; no. 3
Main Authors Isawa, Shohei, Akashi, Yota, Morita, Ryosuke, Kaneko, Runa, Okada, Hirokazu, Matsumoto, Atsushi, Akahane, Koichi, Matsushima, Yuichi, Ishikawa, Hiroshi, Utaka, Katsuyuki
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 01.02.2020
Subjects
Energy gap
Integrated circuits
Ion implantation
Light sources
Photoluminescence
Photonics
Polymer films
Quantum dots
Silicon dioxide
Substrates
Wave division multiplexing
Wavelength division multiplexing
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Summary:The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm‐band QD such as integrated wavelength division multiplexing (WDM) light sources.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201900521