Active Ion-Trajectory Control at the Wafer Extreme Edge in Plasma Etch

As the impedance of the conventional plasma etching system at the edge of the wafer is not consistent with that at the center of the wafer, the movement trajectory of ions at the edge of the wafer is deviated and it is difficult to meet the more stringent requirements on etching process uniformity a...

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Bibliographic Details
Published inBeijing da xue xue bao Vol. 55; no. 6; pp. 1002 - 1006
Main Authors Li, Guorong, Zhao, Kui, Yan, Lijun, Hiroshi, Iizuka, Liu, Shenjian, Tom, Ni, Zhang, Xing
Format Journal Article
LanguageEnglish
Published Beijing Acta Scientiarum Naturalium Universitatis Pekinenis 01.01.2019
Subjects
Etching
Ions
Plasma etching
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Summary:As the impedance of the conventional plasma etching system at the edge of the wafer is not consistent with that at the center of the wafer, the movement trajectory of ions at the edge of the wafer is deviated and it is difficult to meet the more stringent requirements on etching process uniformity and high aspect ratio. A method to optimize the movement direction of edge ions by adjusting the impedance of the wafer edge is proposed which can continuously and real-time adjust the movement trajectory of edge ions and control the direction of edge ions. The results show that the direction of ion movement can be optimized to be perpendicular to the surface of the wafer, the uniformity of the edge etch rate is optimized, and the vertical etching morphology is obtained.
ISSN:0479-8023
DOI:10.13209/j.0479-8023.2019.066