Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of ptype silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell

• Published in: Solar energy Vol. 84; no. 5; p. 777
• Main Authors: Dao, Vinh Ai, Heo, Jongkyu, Choi, Hyungwook, Kim, Yongkuk, Park, Seungman, Jung, Sungwook, Lakshminarayan, Nariangadu, Yi, Junsin
• Format: Journal Article
• Language: English
• Published: New York Pergamon Press Inc 01.05.2010
• Subjects: Performance evaluation; Simulation; Software; Solar energy
• ISSN: 0038-092X

The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (Dit), the resistivity of p-type silicon substrates (r) and then work function of transparent conductive oxide (...TCO) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/ back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on r and ...TCO were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed. (ProQuest: ... denotes formulae/symbols omitted.)