Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of ptype silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell

The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (Dit), the resistivity of p-type silicon substrates (r) and then work function of transparent conductive oxide (...TCO) on heterojunction with intrinsic thin-layer (HIT) solar cel...

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Bibliographic Details
Published inSolar energy Vol. 84; no. 5; p. 777
Main Authors Dao, Vinh Ai, Heo, Jongkyu, Choi, Hyungwook, Kim, Yongkuk, Park, Seungman, Jung, Sungwook, Lakshminarayan, Nariangadu, Yi, Junsin
Format Journal Article
LanguageEnglish
Published New York Pergamon Press Inc 01.05.2010
Subjects
Performance evaluation
Simulation
Software
Solar energy
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Summary:The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (Dit), the resistivity of p-type silicon substrates (r) and then work function of transparent conductive oxide (...TCO) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/ back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on r and ...TCO were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0038-092X
1471-1257