A 6800-[Formula Omitted]m2 Resistor-Based Temperature Sensor With ±0.35 °C (3[Formula Omitted]) Inaccuracy in 180-nm CMOS

• Published in: IEEE journal of solid-state circuits Vol. 54; no. 10; p. 2649
• Main Authors: Angevare, Jan A, Makinwa, Kofi A A
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.01.2019
• Subjects: CMOS; Sensors; Temperature sensors; Voltage controlled oscillators

This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 [Formula Omitted], thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma–delta modulator, whose loop filter consists of...