A 6800-[Formula Omitted]m2 Resistor-Based Temperature Sensor With ±0.35 °C (3[Formula Omitted]) Inaccuracy in 180-nm CMOS

This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 [Formula Omitted], thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma–delta modulator, whose loop filter consists of...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 54; no. 10; p. 2649
Main Authors Angevare, Jan A, Makinwa, Kofi A A
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.01.2019
Subjects
CMOS
Sensors
Temperature sensors
Voltage controlled oscillators
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Summary:This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 [Formula Omitted], thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma–delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3[Formula Omitted]) inaccuracy from −35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1[Formula Omitted]) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2019.2921450