A 6800-[Formula Omitted]m2 Resistor-Based Temperature Sensor With ±0.35 °C (3[Formula Omitted]) Inaccuracy in 180-nm CMOS
This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 [Formula Omitted], thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma–delta modulator, whose loop filter consists of...
Saved in:
Published in | IEEE journal of solid-state circuits Vol. 54; no. 10; p. 2649 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.01.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 [Formula Omitted], thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma–delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3[Formula Omitted]) inaccuracy from −35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1[Formula Omitted]) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter. |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2019.2921450 |