Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnS x Se4-x solar cells

In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport...

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Bibliographic Details
Published inScience China materials Vol. 62; no. 6; pp. 797 - 802
Main Authors Xue, Min, Guo, Linbao, Yu, Qing, Duan, Biwen, Shi, Jiangjian, Wu, Huijue, Luo, Yanhong, Li, Dongmei, Meng, Qingbo
Format Journal Article
LanguageEnglish
Published Heidelberg Springer Nature B.V 01.01.2019
Subjects
Carrier transport
Energy conversion efficiency
Molybdenum oxides
Molybdenum trioxide
Photovoltaic cells
Solar cells
Substrates
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Summary:In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.
ISSN:2095-8226
2199-4501
DOI:10.1007/s40843-018-9381-1