Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub-[Formula Omitted] A Sensing Resolution, and 17.5-nS Read Access Time
A new MRAM reference and sensing circuit that can achieve <±1 [Formula Omitted] resolution and 17.5 nS read access from −40 °C to 125 °C is presented in this paper. A trimmable current-mode latch-type sense amplifier (CLSA) with hybrid-resistance-reference (HRR) and cell location compensation is...
Saved in:
Published in | IEEE journal of solid-state circuits Vol. 54; no. 4; p. 1029 |
---|---|
Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.01.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!