Raman spectroscopy of the doped topological insulator (Cu,Ni)^sub x^Bi^sub 2^Se^sub 3

• Published in: Materials chemistry and physics Vol. 223; p. 109
• Main Authors: Barcote, Marcos Vinicius Woiski, de Andrade, Everton, Jurelo, Alcione Roberto, Monteiro, João Frederico Haas Leandro, Siqueira, Ezequiel Costa
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier BV 01.02.2019
• Subjects: Copper; Crystal growth; Crystal lattices; Diffraction patterns; Energy dispersive X ray spectroscopy; Lattice vibration; Low frequencies; Nickel; Raman spectra; Raman spectroscopy; Scanning electron microscopy; Single crystals; Spectrum analysis; X-ray diffraction
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2018.10.053

This paper presents a study on the lattice dynamics of doped topological insulator (Cu,Ni)xBi2Se3 single crystals probed using Raman scattering spectroscopy. The single crystals were grown by melting and characterized through X-ray diffraction and scanning electron microscopy with energy dispersive X-ray spectroscopy. The diffraction patterns were indexed within the space group R-3m and the samples belonged to the rhombohedral layered structure group typical of Bi2Se3. A Raman scattering study was developed, in which three modes were observed at low frequencies: A1g1, Eg2 and A1g2. The low frequency Eg1 mode, even if theoretically predicted, was not observed. No difference was observed in Raman lines between the pure and (Cu,Ni)-doped samples, indicating that the Cu and Ni are probably intercalated (and not substituted) between the Se layers.