Influence of Cu(2)O on Interface Behavior of Copper/SiC(p) Composite Prepared by Spark Plasma Sintering

Copper/SiCp composites were prepared by spark plasma sintering. X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy techniques were used to characterize the sintered samples. Cu2O was found to facilitate the physical wetting at th...

Full description

Saved in:
Bibliographic Details
Published inJournal of the American Ceramic Society Vol. 87; no. 2; p. 302
Main Authors Zhang, Rui, Gao, Lian, Guo, Jingkun
Format Journal Article
LanguageEnglish
Published Columbus Wiley Subscription Services, Inc 01.02.2004
Subjects
Composite materials
Copper
Plasma
Sintering
Online AccessGet full text

Cover

More Information
Summary:Copper/SiCp composites were prepared by spark plasma sintering. X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy techniques were used to characterize the sintered samples. Cu2O was found to facilitate the physical wetting at the interface through the formation of an amorphous intergranular phase. The reaction between SiC and copper was detected in the samples containing little Cu2O. It led to the degradation of SiC reinforcements and the decrease in hardness of copper/SiCp composites. [PERIODICAL ABSTRACT]
ISSN:0002-7820
1551-2916