Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO^sub 2^/Nb:SrTiO^sub 3^ heterostructure

The Pt/CeO2/Nb:SrTiO3 heterostructure that exhibits excellent resistive switching (RS) behavior of a maximum RS ratio of 3 × 104, good retention and multilevel memory is prepared. Obvious photoresponse was observed in this device under the illumination of a laser beam of 405 nm wavelength, which exh...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 778; p. 141
Main Authors Xie, Shuai, Pei, Ling, Li, Meiya, Zhu, Yongdan, Cheng, Xiangyang, Ding, Huaqi, Xiong, Rui
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier BV 25.03.2019
Subjects
Cerium oxides
Electric potential
Heterostructures
High resistance
Laser beams
Light
Photoelectricity
Strontium titanates
Switching
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Summary:The Pt/CeO2/Nb:SrTiO3 heterostructure that exhibits excellent resistive switching (RS) behavior of a maximum RS ratio of 3 × 104, good retention and multilevel memory is prepared. Obvious photoresponse was observed in this device under the illumination of a laser beam of 405 nm wavelength, which exhibits significant switching characteristics at high resistance state. Both light-controlled RS and voltage-controlled photoresponse are demonstrated in this device. Such RS and photoresponse characteristics can be attributed to the Schottky barrier of Pt/CeO2 interface and the electrons trapping/detrapping by oxygen vacancies near the interface. Our work demonstrated feasibility for making multilevel RS memories and for use in multifunctional photoelectric sensors.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2018.11.161