Weak anti-localization in quasi two-dimensional electronic states of epitaxial LuSb thin films

Observation of extreme magnetoresistance (XMR) in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density fun...

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Published inarXiv.org
Main Authors Chatterjee, Shouvik, Shoaib Khalid, Inbar, Hadass S, Goswami, Aranya, Felipe Crasto de Lima, Sharan, Abhishek, Sabino, Fernando P, Brown-Heft, Tobias L, Yu-Hao, Chang, Fedorov, Alexei V, Read, Dan, Anderson Janotti, Palmstrøm, Christopher J
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 31.01.2019
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Summary:Observation of extreme magnetoresistance (XMR) in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for XMR in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi two-dimensional behavior is observed in our thin films for both electron and hole-like carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.
ISSN:2331-8422