Influence of a SiO^sub 2^ passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor

The influence of a SiO2 passivation layer on the electrical properties and reliability of an In–W–Zn–O thin-film transistor (IWZO TFT) was investigated under various post-annealing temperatures (Ta). Although the TFT without passivation showed good transfer characteristics when the Ta is 150 °C, it...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 58; no. 1; p. 018003
Main Authors Koretomo, Daichi, Hashimoto, Yuta, Hamada, Shuhei, Miyanaga, Miki, Furuta, Mamoru
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.01.2019
Subjects
Conductors
Electrical properties
Passivity
Reliability
Semiconductor devices
Silicon dioxide
Thin film transistors
Transistors
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Summary:The influence of a SiO2 passivation layer on the electrical properties and reliability of an In–W–Zn–O thin-film transistor (IWZO TFT) was investigated under various post-annealing temperatures (Ta). Although the TFT without passivation showed good transfer characteristics when the Ta is 150 °C, it has huge hysteresis and poor reliability. Furthermore, the TFTs without passivation changed from transistor to conductor when the Ta is 200 °C or higher. In contrast, the TFTs with passivation exhibited switching property even at Ta of 350 °C. Positive bias temperature stress reliability of the TFTs significantly improved by applying the Ta with passivation. Thus, a passivation layer is essential to increase the Ta, resulting in the improvement of electrical properties and reliability of the IWZO TFTs.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aae895