Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga^sub 2^O^sub 3

• Published in: Optical materials express Vol. 8; no. 1; p. 88
• Main Authors: Awan, Kashif M, Muhammad, Mufasila M, Sivan, Madhavi, Bonca, Spencer, Roqan, Iman S, Dolgaleva, Ksenia
• Format: Journal Article
• Language: English
• Published: Washington Optical Society of America 01.01.2018
• Subjects: Aluminum oxide; Diodes; Energy gap; Gallium nitrides; Gallium oxides; Lattice matching; Optical properties; Optoelectronics; Photonics; Sapphire; Semiconductor materials; Substrates; Surface roughness; Verticality; Visible spectrum; Wave propagation; Waveguides; Wurtzite

Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap wavelength λg = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffe...