Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga^sub 2^O^sub 3

Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap wavelength λg = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffe...

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Bibliographic Details
Published inOptical materials express Vol. 8; no. 1; p. 88
Main Authors Awan, Kashif M, Muhammad, Mufasila M, Sivan, Madhavi, Bonca, Spencer, Roqan, Iman S, Dolgaleva, Ksenia
Format Journal Article
LanguageEnglish
Published Washington Optical Society of America 01.01.2018
Subjects
Aluminum oxide
Diodes
Energy gap
Gallium nitrides
Gallium oxides
Lattice matching
Optical properties
Optoelectronics
Photonics
Sapphire
Semiconductor materials
Substrates
Surface roughness
Verticality
Visible spectrum
Wave propagation
Waveguides
Wurtzite
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Summary:Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap wavelength λg = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffers from growth imperfections due to the lack of a suitable substrate. Recent studies have shown that GaN grown on (−201) β – Ga2O3 (gallium oxide) has better lattice matching and hence superior optical quality as compared to GaN grown traditionally on Al2O3 (sapphire). In this work, we report on the fabrication of GaN waveguides on Ga2O3 substrate, followed by a wet-etch process aimed at the reduction of waveguide surface roughness and improvement of side-wall verticality in these waveguides. The propagation loss in the resulting waveguides has been experimentally determined to be 7.5 dB/cm.
ISSN:2159-3930