Effect of Electron-Acceptor Compounds on the Laser Burning of Photoluminescence of Hybrid Si/SiO x Silicon Nanoparticles

• Published in: Nanotechnologies in Russia Vol. 13; no. 3; pp. 141 - 151
• Main Authors: Rybaltovskii, A O, Zavorotnyi, Yu S, Ishchenko, A A, Parshutkin, A E, Radtsig, V A, Sviridov, A P, Feklichev, E D, Bagratashvili, V N
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer Nature B.V 01.01.2018
• Subjects: Carbon tetrachloride; Helium; Nanoparticles; Photoluminescence; Photosensitivity; Silicon
• ISSN: 1995-0780; 1995-0799
• DOI: 10.1134/S199507801802009X

The role of the environment on the dynamics of the photoburning processes of the red–infrared photoluminescence (PL) of hybrid silicon nanoparticles (npSi/SiOx) under the influence of continuous laser radiation (410 and 635 nm) in different media (in a helium or oxygen atmosphere at low pressures, in carbon tetrachloride solutions, in polymer matrices, and in vacuum) is studied. It is established that the presence of electron-acceptor molecules or compounds in the components of the medium increases the rate of luminescence photoburning (photosensitivity) of npSi/SiOx. The lowest photosensitivity is observed when the nanoparticles are in vacuum or in a helium atmosphere. It is shown that the photoburning rate depends on the wavelength of the exciting radiation. A mechanism of photosensitivity of npSi/SiOx is proposed which is based on recharging the centers involved in the photoluminescence process and located in the oxide shell or at the core–shell interface.