Effect of Electron-Acceptor Compounds on the Laser Burning of Photoluminescence of Hybrid Si/SiO x Silicon Nanoparticles
The role of the environment on the dynamics of the photoburning processes of the red–infrared photoluminescence (PL) of hybrid silicon nanoparticles (npSi/SiOx) under the influence of continuous laser radiation (410 and 635 nm) in different media (in a helium or oxygen atmosphere at low pressures, i...
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Published in | Nanotechnologies in Russia Vol. 13; no. 3; pp. 141 - 151 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Springer Nature B.V
01.01.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The role of the environment on the dynamics of the photoburning processes of the red–infrared photoluminescence (PL) of hybrid silicon nanoparticles (npSi/SiOx) under the influence of continuous laser radiation (410 and 635 nm) in different media (in a helium or oxygen atmosphere at low pressures, in carbon tetrachloride solutions, in polymer matrices, and in vacuum) is studied. It is established that the presence of electron-acceptor molecules or compounds in the components of the medium increases the rate of luminescence photoburning (photosensitivity) of npSi/SiOx. The lowest photosensitivity is observed when the nanoparticles are in vacuum or in a helium atmosphere. It is shown that the photoburning rate depends on the wavelength of the exciting radiation. A mechanism of photosensitivity of npSi/SiOx is proposed which is based on recharging the centers involved in the photoluminescence process and located in the oxide shell or at the core–shell interface. |
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ISSN: | 1995-0780 1995-0799 |
DOI: | 10.1134/S199507801802009X |