Hall Effect in Granular Metals: Weak Localization Corrections

We study the effects of localization on the Hall transport in a granular system at large tunneling conductance \(g_{T}\gg 1\) corresponding to the metallic regime. We show that the first-order in 1/g_T weak localization correction to Hall resistivity of a two- or three-dimensional granular array van...

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Bibliographic Details
Published inarXiv.org
Main Authors Maxim Yu Kharitonov, Efetov, Konstantin B
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 31.07.2007
Subjects
Hall effect
Localization
Resistance
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Summary:We study the effects of localization on the Hall transport in a granular system at large tunneling conductance \(g_{T}\gg 1\) corresponding to the metallic regime. We show that the first-order in 1/g_T weak localization correction to Hall resistivity of a two- or three-dimensional granular array vanishes identically, \(\de \rho_{xy}^{WL}=0\). This result is in agreement with the one for ordinary disordered metals. Being due to an exact cancellation, our result holds for arbitrary relevant values of temperature T and magnetic field H, both in the ``homogeneous'' regime of very low T and H corresponding to ordinary disordered metals and in the ``structure-dependent'' regime of higher values of T or H.
ISSN:2331-8422