Reversible 300K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor

The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstit...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Schwartz, Dana A, Gamelin, Daniel R
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 21.04.2004
Subjects
Cobalt
Dilution
Electron spin
Electronic devices
Ferromagnetism
Magnetic semiconductors
Magnetism
Zinc oxide
Online AccessGet full text

Cover

More Information
Summary:The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.
Bibliography:content type line 50
SourceType-Working Papers-1
ObjectType-Working Paper/Pre-Print-1
ISSN:2331-8422