Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient

We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on t...

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Published inarXiv.org
Main Authors Choi, H K, Lee, W O, Oh, Y S, Kim, K H, Park, Y D, Seo, S S A, Noh, T W, Kim, Y S, Khim, Z G, Jeong, I T, Woo, J C, Chun, S H
Format Paper
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 17.03.2006
Subjects
Annealing
Clustering
Hall effect
Inclusions
Inhomogeneous systems
Optimization
Scaling
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Summary:We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements.
ISSN:2331-8422
DOI:10.48550/arxiv.0603468